<br> The surface or interfacial tension beneath the thermal equilibrium is determined by materials alone regardless of a state thereof. FIG. 18 shows that material B on a flat material A becomes orbicular form below a thermal equilibrium state. The material of the barrier metallic is such that response with the Si substrate is suppressed. A (100) Si single crystal eleven is used as a substrate. Even in a case the place the spherically agglomerated Al islands involved with the only-crystal interconnection will be eliminated at a later course of, there may be remained a crystal grain boundary in a portion of the only-crystal interconnection after the elimination thereof, thus presumably contributing to the reduction of wiring reliability. FIGS. 22A-22C illustrate a case where materials B is crammed into the fabric B the place there exist both a densely positioned wiring groove and a non-densely positioned wiring groove on the same machine. So as to solve such problems, it is essential to keep away from the case where the amount of Al to be filled in the groove is in excess of what is critical in order that the spherically agglomerated Al islands are formed and to keep away from the case the place the Al quantity is in short of what is critical in order that the interconnection is disconnected.<br>
<br> Moreover, the wiring metal is crammed within the groove of the wiring area by agglomeration, and the residual excess metal movie may be left within the area of no wiring. FIGS. 25A, Aluminum single wire 25B and 25C show electrode wirings the place there are provided excess steel storing regions for storing a residual wiring metals. FIGS. 44A-44C show an electrode wiring construction where the wettability enhancing layer is formed in the internal surface of the groove. FIGS. 43A-43C show electrode wiring constructions where there are supplied barrier layers. FIGS. 45A-45C show an electrode wiring construction where there is formed the wettability bettering layer in the world aside from the groove portion. FIGS. 33A-33C show the smoothly curved surface of the higher floor of wiring formed in line with the wettability between the Al and the interlayer insulator. Having good wettability means that material is formed onto a layer or a groove in such a way that: a contact angle between, say, an higher material and a decrease materials disposed beneath the higher material is relatively low.<br>
<br> FIG. 34 shows the easily curved floor of the upper floor of wring downwardly based on the seventh embodiment. 13A-13C present cross sectional views for making a semiconductor gadget in response to the fourth embodiment. FIG. 11A-11E present cross sectional views for making a semiconductor gadget according to the third embodiment. With reference to FIG. 1A, FIG. 1B and FIG. 1 C, there are proven cross sectional views for making a semiconductor system in accordance with the primary embodiment of the present invention. Embodiments of the present invention will now be described with reference to the drawings. Features of the current invention will become apparent in the course of the following description of exemplary embodiments which are given for illustration of the invention and should not supposed to be limiting thereof. Gases utilized in the RIE are mixture of CF.sub.4 and H.sub.2 which stream at a charge of sixteen SCCM (normal cc per minute) and 24 SCCM, respectively. Thus, it is critical to obtain, from time and temperature, the temperature-rise rate at which agglomeration temperature is reached as proven in FIG. 3. When the temperature-rise price is excessive, agglomeration begins throughout which virtually no reaction product is produced.<br>
<br> It shall be appreciated that an arriving time within which the agglomeration does not happen further in the groove may be saved as such although in the expertise carried out by the applicants this time the gadget is cooled in a pure method after a temperature rise. A strain at the time of etching is controlled to forty mTorr and an applied energy on the time of etching is 800 W. Thereafter, a resist is eliminated in an ambiance of oxygen plasma. Thereafter, there's obtained a significant impact of suppressing the diffusion and reaction between W and Al, and Al and Si, respectively, so that the C movie will be utilized as a barrier layer. Ar is a gas that's utilized within the sputtering, a background pressure is less than 10.sup.-8 Torr, a stress beneath sputtering is 3.instances.10.sup.-Three Torr, and an utilized power is 6 KW, so as to form film suppressing the formation of the native oxide movie. Then, fuel utilized in the etching was CF.sub.4, an etching stress was 7.Eight mTorr, and the utilized power was 50 W. By the RIE, the bottom face and facet face of the groove are made so that wettability thereof is sweet.<br>
