<br> The floor or interfacial tension under the thermal equilibrium is determined by material alone regardless of a state thereof. FIG. 18 reveals that materials B on a flat materials A turns into orbicular shape beneath a thermal equilibrium state. The material of the barrier metal is such that response with the Si substrate is suppressed. A (100) Si single crystal 11 is used as a substrate. Even in a case the place the spherically agglomerated Al islands in touch with the only-crystal interconnection will be eliminated at a later process, there could also be remained a crystal grain boundary in a portion of the single-crystal interconnection after the removal thereof, thus probably contributing to the reduction of wiring reliability. FIGS. 22A-22C illustrate a case where material B is stuffed into the material B where there exist both a densely located wiring groove and a non-densely positioned wiring groove on the same device. In order to solve such issues, it is necessary to avoid the case where the volume of Al to be filled in the groove is in excess of what is important so that the spherically agglomerated Al islands are formed and to keep away from the case the place the Al volume is in wanting what is important in order that the interconnection is disconnected.<br>
<br> Moreover, the wiring steel is filled in the groove of the wiring area by agglomeration, and the residual excess steel film could also be left within the area of no wiring. FIGS. 25A, Aluminum single wire 25B and 25C show electrode wirings the place there are supplied excess metal storing regions for storing a residual wiring metals. FIGS. 44A-44C present an electrode wiring construction the place the wettability enhancing layer is formed in the internal surface of the groove. FIGS. 43A-43C show electrode wiring structures the place there are offered barrier layers. FIGS. 45A-45C show an electrode wiring structure where there's formed the wettability improving layer in the world other than the groove portion. FIGS. 33A-33C present the easily curved floor of the upper surface of wiring formed in response to the wettability between the Al and the interlayer insulator. Having good wettability signifies that material is formed onto a layer or a groove in such a way that: a contact angle between, say, an higher materials and a decrease materials disposed beneath the upper material is relatively low.<br>
<br> FIG. 34 exhibits the smoothly curved floor of the higher floor of wring downwardly in accordance with the seventh embodiment. 13A-13C show cross sectional views for making a semiconductor device in accordance with the fourth embodiment. FIG. 11A-11E present cross sectional views for making a semiconductor device based on the third embodiment. With reference to FIG. 1A, FIG. 1B and FIG. 1 C, there are proven cross sectional views for making a semiconductor machine in response to the primary embodiment of the present invention. Embodiments of the current invention will now be described with reference to the drawings. Features of the current invention will turn into apparent in the course of the next description of exemplary embodiments that are given for illustration of the invention and usually are not meant to be limiting thereof. Gases utilized within the RIE are mixture of CF.sub.4 and H.sub.2 which stream at a charge of sixteen SCCM (standard cc per minute) and 24 SCCM, respectively. Thus, it is necessary to obtain, from time and temperature, the temperature-rise price at which agglomeration temperature is reached as proven in FIG. 3. When the temperature-rise fee is excessive, agglomeration starts during which virtually no reaction product is produced.<br>
<br> It shall be appreciated that an arriving time within which the agglomeration does not occur further within the groove may be stored as such though within the experience carried out by the candidates this time the device is cooled in a natural manner after a temperature rise. A pressure at the time of etching is managed to 40 mTorr and an utilized power on the time of etching is 800 W. Thereafter, a resist is removed in an ambiance of oxygen plasma. Thereafter, there may be obtained a major effect of suppressing the diffusion and response between W and Al, and Al and Si, respectively, in order that the C film will be utilized as a barrier layer. Ar is a gas that is utilized within the sputtering, a background stress is lower than 10.sup.-8 Torr, a strain underneath sputtering is 3.instances.10.sup.-Three Torr, and an utilized energy is 6 KW, so as to type film suppressing the formation of the native oxide film. Then, gas utilized within the etching was CF.sub.4, an etching pressure was 7.8 mTorr, and the applied energy was 50 W. By the RIE, the bottom face and facet face of the groove are made in order that wettability thereof is sweet.<br>
