<br> The surface or interfacial tension below the thermal equilibrium is decided by material alone regardless of a state thereof. FIG. 18 shows that materials B on a flat material A turns into orbicular shape beneath a thermal equilibrium state. The material of the barrier metal is such that response with the Si substrate is suppressed. A (100) Si single crystal eleven is used as a substrate. Even in a case where the spherically agglomerated Al islands in contact with the single-crystal interconnection will be removed at a later process, there could also be remained a crystal grain boundary in a portion of the one-crystal interconnection after the removal thereof, thus possibly contributing to the reduction of wiring reliability. FIGS. 22A-22C illustrate a case the place material B is crammed into the material B the place there exist both a densely positioned wiring groove and a non-densely situated wiring groove on the same system. In order to solve such problems, it is necessary to keep away from the case where the quantity of Al to be stuffed in the groove is in excess of what is important in order that the spherically agglomerated Al islands are formed and to keep away from the case the place the Al volume is in in need of what is critical so that the interconnection is disconnected.<br>
<br> Moreover, the wiring metallic is filled in the groove of the wiring region by agglomeration, and the residual excess metallic movie could also be left in the area of no wiring. FIGS. 25A, Aluminum single wire 25B and 25C present electrode wirings where there are offered excess metallic storing areas for storing a residual wiring metals. FIGS. 44A-44C present an electrode wiring construction where the wettability enhancing layer is formed in the internal floor of the groove. FIGS. 43A-43C present electrode wiring buildings where there are offered barrier layers. FIGS. 45A-45C present an electrode wiring construction the place there is formed the wettability enhancing layer in the area apart from the groove portion. FIGS. 33A-33C show the smoothly curved floor of the higher floor of wiring formed in line with the wettability between the Al and the interlayer insulator. Having good wettability signifies that material is formed onto a layer or a groove in such a manner that: a contact angle between, say, an higher materials and a decrease materials disposed beneath the higher material is comparatively low.<br>
<br> FIG. 34 exhibits the smoothly curved floor of the higher floor of wring downwardly in line with the seventh embodiment. 13A-13C present cross sectional views for making a semiconductor gadget in line with the fourth embodiment. FIG. 11A-11E show cross sectional views for making a semiconductor system in response to the third embodiment. With reference to FIG. 1A, FIG. 1B and FIG. 1 C, there are proven cross sectional views for making a semiconductor device based on the first embodiment of the current invention. Embodiments of the present invention will now be described with reference to the drawings. Features of the present invention will develop into obvious in the course of the next description of exemplary embodiments that are given for illustration of the invention and usually are not intended to be limiting thereof. Gases utilized in the RIE are mixture of CF.sub.Four and H.sub.2 which movement at a rate of sixteen SCCM (normal cc per minute) and 24 SCCM, respectively. Thus, it is necessary to obtain, from time and temperature, the temperature-rise price at which agglomeration temperature is reached as shown in FIG. 3. When the temperature-rise fee is excessive, agglomeration starts during which nearly no response product is produced.<br>
<br> It shall be appreciated that an arriving time inside which the agglomeration does not happen further in the groove could also be stored as such although within the experience carried out by the candidates this time the gadget is cooled in a pure method after a temperature rise. A pressure on the time of etching is controlled to forty mTorr and an utilized power at the time of etching is 800 W. Thereafter, a resist is eliminated in an atmosphere of oxygen plasma. Thereafter, there is obtained a big effect of suppressing the diffusion and response between W and Al, and Al and Si, respectively, in order that the C movie might be utilized as a barrier layer. Ar is a gasoline that's utilized within the sputtering, a background pressure is lower than 10.sup.-8 Torr, a stress beneath sputtering is 3.occasions.10.sup.-3 Torr, and an applied power is 6 KW, so as to type movie suppressing the formation of the native oxide film. Then, fuel utilized in the etching was CF.sub.4, an etching strain was 7.8 mTorr, and the utilized power was 50 W. By the RIE, the bottom face and aspect face of the groove are made so that wettability thereof is good.<br>
